Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage

Author

Stathis, James H. ; Vayshenker, A. ; Varekamp, P.R. ; Wu, E.Y. ; Montrose, C. ; McKenna, J. ; DiMaria, D.J. ; Han, L.-K. ; Cartier, E. ; Wachnik, R.A. ; Linder, B.P.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2000

fDate

13-15 June 2000

Firstpage

94

Lastpage

95

Abstract

MOSFETs with oxide thickness from t/sub ox/=1.4 to 2.2nm have been stressed for times exceeding one year, at voltages in the range V/sub g/=1.9-4V. The data are compared with previous model calculations. The voltage acceleration of the charge-to-breakdown (Q/sub BD/) is explained in terms of a weak yet statistically significant voltage dependence of the critical defect density at breakdown (N/sup BD/), and a stronger than expected voltage dependence of the defect generation probability (P/sub g/) for the thinnest oxides studied.

Keywords

MOSFET; semiconductor device breakdown; silicon compounds; 1.4 to 2.2 nm; 1.9 to 4 V; MOSFET; SiO/sub 2/; SiO/sub 2/ ultrathin gate oxide; charge-to-breakdown; critical defect density; defect generation probability; low voltage breakdown; voltage dependence; Breakdown voltage; Charge measurement; Current measurement; Extrapolation; Low voltage; Solid modeling; Statistical distributions; Stress; Temperature; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852783

Filename

852783