Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor for multigigabit-scale DRAM generation

Author

Wan Don Kim ; Jin Won Kim ; Seok Jun Won ; Sang Don Nam ; Byeong Yun Nam ; Cha Young Yoo ; Young Wook Park ; Sang In Lee ; Moon Yong Lee

Author_Institution

Process Dev. Team, Samsung Electron. Co. Ltd., Yongin City, South Korea

fYear

2000

fDate

13-15 June 2000

Firstpage

100

Lastpage

101

Abstract

We have investigated the electrical properties of metal/Ta/sub 2/O/sub 5//metal (MIM-Ta/sub 2/O/sub 5/) capacitor for multigigabit-scale DRAMs. CVD-TiN film was used as a bottom electrode, whereas PVD-TiN, CVD-TiN and CVD-Ru metals were compared for a top electrode. Our results, including electrical properties and step coverage, showed that a CVD-Ru film is the most promising top electrode material. Based on this result, a CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor with cylinder-type storage node was developed, and the cell capacitance of 40fF/cell with the leakage current of 0.1fA/cell at /spl plusmn/1 V applied voltage was accomplished.

Keywords

CVD coatings; DRAM chips; MIM devices; capacitors; ruthenium; tantalum compounds; titanium compounds; CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor; DRAM; MIM capacitor; Ru-Ta/sub 2/O/sub 5/-TiN; electrical properties; leakage current; step coverage; Annealing; Capacitors; Dielectric constant; Electrodes; Gases; Leakage current; Random access memory; Semiconductor films; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852785

Filename

852785