Title :
A conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction
Author :
Hiratani, M. ; Nabatame, T. ; Matsui, Y. ; Shimamoto, Y. ; Sasago, Y. ; Nakamura, Y. ; Ohji, Y. ; Asano, I. ; Kimura, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have developed a novel CVD-Ru technique, clarified the growth mechanism and fabricated BST capacitors. The growth mechanism is dominated by the surface reaction which is rate-determined by the oxygen supply. Well-tuned conditions enable fabrication of any type of storage node: a concave type with a uniform 20-nm film thickness and a pillar type from a buried film. The electrode/BST interface is degraded by the reduction-oxidation reaction during the Ru-CVD, but post-annealing restores the ideal I-V characteristics.
Keywords :
CVD coatings; DRAM chips; MIM devices; capacitors; conformal coatings; electrodes; ruthenium; BST MIM capacitor; BaSrTiO/sub 3/; CVD technology; DRAM; I-V characteristics; Ru; annealing; conformal ruthenium electrode; fabrication; oxygen controlled surface reaction; reduction-oxidation reaction; Argon; Binary search trees; Conductivity; Electrodes; Fabrication; MIM capacitors; Optical films; Random access memory; Solvents; Temperature;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852786
