Integrated circuit technology options for RFIC´s-present status and future directions

Author

Larson, Lawrence E.

Author_Institution

Center for Wireless Commun., California Univ., San Diego, La Jolla, CA, USA

fYear

1997

fDate

5-8 May 1997

Firstpage

169

Lastpage

176

Abstract

This paper summarizes the technology tradeoffs that are involved in the implementation of radiofrequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise-figure, linearity, gain, power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS, and BJT, Si/SiGe HBTs, and GaAs MESFETs, PHEMTs and HBTs are examined

Keywords

CMOS integrated circuits; HEMT integrated circuits; MESFET integrated circuits; MMIC; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit technology; land mobile radio; mobile radio; reviews; transceivers; GaAs; GaAs HBT; GaAs MESFET; GaAs PHEMT; IC technology options; Integrated circuit technology; RFIC; Si; Si BJT; Si CMOS; Si-SiGe; Si/SiGe HBT; UHF IC; pseudomorphic HEMT; radio transceiver circuits; radiofrequency integrated circuits; wireless communications; CMOS technology; Germanium silicon alloys; Integrated circuit noise; Integrated circuit technology; Linearity; Power dissipation; Radio transceivers; Radiofrequency integrated circuits; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606607

Filename

606607