Title :
Twin MONOS cell with dual control gates
Author :
Hayashi, Y. ; Ogura, S. ; Saito, T. ; Ogura, T.
Author_Institution :
Halo LSI, Tsukuba, Japan
Abstract :
A new twin MONOS cell for high density, high speed and low power program is presented having a proposed hard bit density of 3F/sup 2/ and soft-bit density of 1.5 F/sup 2/ with 2-bit multilevel storage, program speed of <1 usec and program current of /spl sim/10 uA/cell.
Keywords :
MOS memory circuits; flash memories; high-speed integrated circuits; low-power electronics; dual control gates; flash memory; high-density high-speed operation; low power programming; multilevel storage; twin split gate MONOS cell; Channel hot electron injection; MONOS devices; Motion control; Motion pictures; Nonvolatile memory; Split gate flash memory cells; Thickness control; Threshold voltage; Voltage control; Weight control;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852794
