DocumentCode
2161956
Title
Direct measurement of V/sub th/ fluctuation caused by impurity positioning
Author
Tanaka, T. ; Usuki, T. ; Momiyama, Y. ; Sugii, T.
Author_Institution
Quantum Electron Devices Lab., Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2000
fDate
13-15 June 2000
Firstpage
136
Lastpage
137
Abstract
This paper studies a local fluctuation of channel impurity on the source edge. Our direct measurement successfully separates the local (intra-FET) and global (inter-FET) factors. The quite local region (/spl Lt/L/sub eff//spl times/W/sub eff/) significantly affects V/sub th/ distribution in a high V/sub d/, which exceeds the global factor in the smallest MOSFETs. The local fluctuation inevitably affects MOSFETs in SRAM cells even though global fluctuation is reduced by process optimization.
Keywords
MOSFET; impurity distribution; semiconductor device measurement; MOSFETs; SRAM cells; V/sub th/ fluctuation; channel impurity; global fluctuation; impurity positioning; inter-FET factors; intra-FET factors; local fluctuation; process optimization; source edge; Boron; FETs; Fluctuations; Impurities; Indium; MOSFET circuits; Paper technology; Position measurement; Probability distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852800
Filename
852800
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