Gas flow rate effects from a Z-pinch discharge plasma on extreme ultraviolet emission

Author

Zhang, C.H. ; Lv, P. ; Katsuki, S. ; Akiyama, H.

Author_Institution

Dept. of Electr. Eng., Univ. of Shanghai for Sci. & Technol., Shanghai

fYear

2009

fDate

3-6 May 2009

Firstpage

958

Lastpage

961

Abstract

Extreme ultraviolet (EUV) radiation with wavelengths of 11 to 14 nm is seen as the most promising candidate for a new lithographic technology. Compared to synchrotron radiation sources and laser produced plasmas, gas discharge produced plasma (GDPP) sources for EUV radiation are expected to offer lower cost of ownership. This paper describes the dependence of EUV emission on gas flow rate. Using xenon a broadband emission in the investigated wavelength range from 10 to 18 nm is observed. Very short current pulses were applied across the xenon-filled Z-pinch capillary (3 mm diameter and 5 mm length) to produce EUV radiation. A EUV radiation from the Z-pinch plasma was characterized, which is based on the temporal behavior of EUV intensity and the pinhole images.

Keywords

Z pinch; discharges (electric); plasma production by laser; plasma sources; ultraviolet spectra; xenon; Xe; Z-pinch discharge plasma; extreme ultraviolet emission; gas discharge-produced plasma; gas flow rate; laser-produced plasmas; lithographic technology; size 3 mm; size 5 mm; synchrotron radiation sources; wavelength 10 nm to 18 nm; wavelength 11 nm to 14 nm; Costs; Discharges; Fault location; Fluid flow; Gas lasers; Plasma sources; Plasma waves; Synchrotron radiation; Ultraviolet sources; Xenon; EUV; Z-pinch; gas discharge; lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2009. CCECE '09. Canadian Conference on

Conference_Location

St. John´s, NL

ISSN

0840-7789

Print_ISBN

978-1-4244-3509-8

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2009.5090270

Filename

5090270