A 180 nm copper/low-k CMOS technology with dual gate oxide optimized for low power and low cost consumer wireless applications

Author

Yeap, G.C.-F. ; Nkansah, F. ; Chen, J. ; Jallepalli, S. ; Pham, D. ; Lii, T. ; Nangia, A. ; Le, P. ; Hall, D. ; Menke, D. ; Sun, J. ; Das, A. ; Gilbert, P. ; Huang, F. ; Sturtevant, J. ; Green, K. ; Lu, J. ; Benavidas, J. ; Banks, E. ; Chung, J. ; Lage, C

Author_Institution

Digital DNA Labs., Motorola Inc., Austin, TX, USA

fYear

2000

fDate

13-15 June 2000

Firstpage

150

Lastpage

151

Abstract

We report a 180 nm CMOS technology with dual gate oxide (DGO) optimized for low power and low cost consumer wireless products. To minimize cost and maximize manufacturability, super halo is used for the first time to integrate 70 /spl Aring/ 2.5-3.3 V I/O devices with either 130 nm/29 /spl Aring/ or 150 nm/35 /spl Aring/ low leakage (LL) p/spl Aring///spl mu/m devices, eliminating three normally-required masks. Core LL devices optimized for 1.5 V and 1.8 V are available to maximize circuit design compatibility and IP reuse. Both LL devices yield superior performance, and less I/sub on//I/sub off/ sensitivity vs. gate-length control for robust manufacturing as compared to recently reported LL devices. This technology also features an all-layer copper/low-k interlayer dielectric backend for speed improvement and dynamic power reduction.

Keywords

CMOS analogue integrated circuits; cellular radio; integrated circuit interconnections; ion implantation; low-power electronics; masks; 1.5 V; 1.8 V; 180 nm; Cu; I/O devices; IP reuse; cell phones; channel doping increase; circuit design compatibility; consumer wireless products; copper/low-k CMOS technology; core LL devices; dual gate oxide; dynamic power reduction; low cost; low power; low-k interlayer dielectric backend; manufacturability; optimization; process integration; robust manufacturing; self-aligned tilt halo implants; super halo; CMOS technology; Circuit synthesis; Copper; Cost function; Design optimization; Implants; Manufacturing; Robust control; Sun; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852805

Filename

852805