Title :
An epitaxial channel MOSFET for improving flicker noise under low supply voltage
Author :
Ohguro, T. ; Hasumi, R. ; Ishikawa, T. ; Nishigori, M. ; Oyamatsu, H. ; Matsuoka, F.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We investigated the analog performance of a 0.11 /spl mu/m CMOS under a low supply voltage. In order to avoid flicker noise degradation under the low supply voltage, an epitaxial channel MOSFET without halo implantation was shown to be effective.
Keywords :
CMOS analogue integrated circuits; MOSFET; flicker noise; integrated circuit measurement; integrated circuit noise; semiconductor device measurement; semiconductor device noise; 0.11 mum; 1.0 V; CMOS; analog performance; epitaxial channel MOSFET; flicker noise; flicker noise degradation; low supply voltage; 1f noise; Charge measurement; Charge pumps; Current measurement; Degradation; Insulation; Low voltage; MOS devices; MOSFET circuits; Semiconductor device noise;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852809
