DocumentCode
2162145
Title
An epitaxial channel MOSFET for improving flicker noise under low supply voltage
Author
Ohguro, T. ; Hasumi, R. ; Ishikawa, T. ; Nishigori, M. ; Oyamatsu, H. ; Matsuoka, F.
Author_Institution
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear
2000
fDate
13-15 June 2000
Firstpage
160
Lastpage
161
Abstract
We investigated the analog performance of a 0.11 /spl mu/m CMOS under a low supply voltage. In order to avoid flicker noise degradation under the low supply voltage, an epitaxial channel MOSFET without halo implantation was shown to be effective.
Keywords
CMOS analogue integrated circuits; MOSFET; flicker noise; integrated circuit measurement; integrated circuit noise; semiconductor device measurement; semiconductor device noise; 0.11 mum; 1.0 V; CMOS; analog performance; epitaxial channel MOSFET; flicker noise; flicker noise degradation; low supply voltage; 1f noise; Charge measurement; Charge pumps; Current measurement; Degradation; Insulation; Low voltage; MOS devices; MOSFET circuits; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852809
Filename
852809
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