Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

Author

Saito, Y. ; Sekine, K. ; Ueda, N. ; Hirayama, M. ; Sugawa, S. ; Ohmi, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

2000

fDate

13-15 June 2000

Firstpage

176

Lastpage

177

Abstract

This paper focuses attention on the advantage of oxygen radical oxidation by a microwave-excited high-density Kr/O/sub 2/ plasma for improving the disadvantages of conventional thermal oxidation processes using H/sub 2/O and/or O/sub 2/ molecules, and demonstrates that the Kr/O/sub 2/ plasma oxidation process can improve the thickness variation on shallow-trench isolation and integrity of silicon oxide not only on the [100] surface but also on the [111] surface compared to those of conventional thermal oxidation processes.

Keywords

free radical reactions; insulating thin films; isolation technology; oxidation; plasma materials processing; semiconductor device reliability; silicon compounds; surface chemistry; Kr; Kr/O/sub 2/ plasma oxidation process; O/sub 2/; Si; SiO/sub 2/; [100] surface; [111] surface; microwave-excited high-density Kr/O/sub 2/ plasma; oxygen radical oxidation; radical oxidation; reliability; shallow-trench isolation; silicon oxide; thickness; ultra-thin gate oxide; Electric breakdown; Electronics industry; Industrial electronics; Oxidation; Plasma applications; Plasma properties; Plasma temperature; Reliability engineering; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852815

Filename

852815