DocumentCode
2162370
Title
Insulating properties of semi-insulating silicon under high field excitation
Author
Sudarshan, T.S. ; Gradinaru, G. ; Korony, G.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Volume
1
fYear
1994
fDate
3-8 Jul 1994
Firstpage
328
Abstract
Experimental results and discussions are presented on the pulsed surface flashover characteristics of semi-insulating silicon in different ambient dielectric media including vacuum, air, N2, and SF6. The quality of the semiconductor (bulk, surface), contact technology, system configuration (device and contact geometries, electrode configuration), and the ambient medium surrounding the silicon specimen are all found to influence strongly the prebreakdown and the breakdown characteristics of the semiconductor-ambient dielectric system. Our results support the interface nature of the surface flashover, a process distinctly different from semiconductor breakdown
Keywords
Electric breakdown; Electrodes; Flashover; Gold; Hafnium; Insulation; Semiconductor device breakdown; Silicon; Space technology; Vacuum breakdown;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 1994., Proceedings of the 4th International Conference on
Conference_Location
Brisbane, Qld.
Print_ISBN
0-7803-1307-0
Type
conf
DOI
10.1109/ICPADM.1994.414006
Filename
414006
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