Title :
An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits
Author :
Xiaodong Jin ; Kanyu Cao ; Jia-Jiunn Ou ; Weidong Liu ; Yuhua Cheng ; Matloubian, M. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
An accurate Non-Quasistatic SPICE model based on relaxation time is proposed for ac and transient simulation of high speed and radio frequency (RF) circuits. A method for extracting the relaxation time is also provided. Its dependence on Vgs and Vds and channel length is based on physics and built in the model. Finally the model is verified with both 2D simulation and measurement.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; high-speed integrated circuits; integrated circuit modelling; semiconductor device models; 2D simulation; RF circuits; ac simulation; accurate nonquasistatic SPICE model; channel length; high speed circuits; nonquasistatic MOSFET model; radio frequency circuits; relaxation time; simulation; transient simulation; Circuit simulation; Computational modeling; Computer simulation; Electrical resistance measurement; MOSFET circuits; Parameter extraction; Radio frequency; SPICE; Semiconductor device modeling; Steady-state;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852823
