• DocumentCode
    2162527
  • Title

    High divider ratio fast response capacitive dividers for high voltage pulse measurements

  • Author

    Jayaram, S. ; Xu, X. ; Cross, J.D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    2
  • fYear
    1995
  • fDate
    8-12 Oct 1995
  • Firstpage
    1201
  • Abstract
    The paper reports the experimental results of the development of a novel capacitive divider for high voltage pulse measurements. The low voltage arm capacitor was prepared by thermally growing silicon oxide on commercially available silicon wafers to form capacitors of very large capacitance per unit area (>10 nF with 2 μm oxide thickness on a 30 mm diameter wafer). With the proposed design for LV arm capacitance, divider ratios of the order >10000 can easily be obtained. Further studies have been carried out to improve the response time of this high division ratio divider
  • Keywords
    capacitance; capacitors; electron device testing; high-voltage techniques; voltage dividers; voltage measurement; 2 mum; 30 mm; Si-SiO; capacitive dividers; design; divider ratio; fast response time; high voltage pulse measurements; thermal growth; Capacitance; Capacitors; Delay; Electrodes; Low voltage; Optical pulse generation; Power system transients; Pulse measurements; Pulse power systems; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-3008-0
  • Type

    conf

  • DOI
    10.1109/IAS.1995.530436
  • Filename
    530436