DocumentCode
2162719
Title
Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability
Author
Wachnik, R.A. ; Filippi, R.G. ; Shaw, T.M. ; Lin, P.C.
Author_Institution
Div. of Microelectron., IBM Corp., Hopewell Junction, NY, USA
fYear
2000
fDate
13-15 June 2000
Firstpage
220
Lastpage
221
Abstract
A simple first principles model is shown to accurately relate resistance saturation during electromigration to the current density and stripe length. Resistance saturation is found to be independent of temperature in the range 170-250/spl deg/C. The above observations allow for the development of a new design rule methodology. An electromigration resistant power grid may be designed which takes advantage of the short-length effect.
Keywords
electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; power integrated circuits; 170 to 250 C; design rule; electromigration; first principles model; power grid; resistance saturation; short length effect; wireability; Conductors; Current density; Design methodology; Electromigration; Equations; Power grids; Stochastic processes; Stress; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852833
Filename
852833
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