• DocumentCode
    2162719
  • Title

    Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability

  • Author

    Wachnik, R.A. ; Filippi, R.G. ; Shaw, T.M. ; Lin, P.C.

  • Author_Institution
    Div. of Microelectron., IBM Corp., Hopewell Junction, NY, USA
  • fYear
    2000
  • fDate
    13-15 June 2000
  • Firstpage
    220
  • Lastpage
    221
  • Abstract
    A simple first principles model is shown to accurately relate resistance saturation during electromigration to the current density and stripe length. Resistance saturation is found to be independent of temperature in the range 170-250/spl deg/C. The above observations allow for the development of a new design rule methodology. An electromigration resistant power grid may be designed which takes advantage of the short-length effect.
  • Keywords
    electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; power integrated circuits; 170 to 250 C; design rule; electromigration; first principles model; power grid; resistance saturation; short length effect; wireability; Conductors; Current density; Design methodology; Electromigration; Equations; Power grids; Stochastic processes; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-6305-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2000.852833
  • Filename
    852833