Q enhancement with cross-connected coplanar waveguides in thick dual damascene Cu

Author

Van Noort, Wibo D. ; Tiemeijer, L. ; Detcheverry, C. ; Verheijden, G. ; Bancken, P. ; Daamen, R. ; Havens, R.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2005

fDate

12-17 June 2005

Abstract

A 2 times 2 μm, dual damascene, dual metal Cu in SiLK™ process on 200 mm high-resistivity silicon wafers is presented. The lines and spaces in both metal layers can be patterned to submicron dimensions. The extremely low specific contact resistance of the vias, typical for dual damascene Cu, is utilized to make coplanar waveguides, patterned specifically to suppress skin and proximity effects. RF measurements from 1 to 100 GHz show an increase in Q factor up to 30% in the 1 to 15 GHz frequency interval for the patterned lines.

Keywords

Q-factor; contact resistance; coplanar waveguides; copper; elemental semiconductors; integrated circuit interconnections; microwave measurement; proximity effect (lithography); silicon; skin effect; 1 to 100 GHz; 2 micron; 200 mm; Cu-Si; Q enhancement; RF measurements; SiLK process; contact resistance; cross-connected coplanar waveguides; proximity effects; skin effect; thick dual damascene copper; Contact resistance; Coplanar waveguides; Electrical resistance measurement; Frequency measurement; Proximity effect; Q factor; Q measurement; Radio frequency; Silicon; Skin;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517081

Filename

1517081