Evaluation of material property requirements and performance of ultra-low dielectric constant insulators for inlaid copper metallization

Author

Wetzel, J.T. ; Lin, S.H. ; Mickler, E. ; Lee, J. ; Ahlbum, B. ; Jin, C. ; Fox, R.J., III ; Tsai, M.-H. ; Mlynko, W. ; Monnig, K.A. ; Winebarger, P.M.

Author_Institution

Int. Sematech, Austin, TX, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Technological challenges for selection and integration of ultra-low dielectric constant insulators are discussed. Correlations of material properties with their performance in 1 level-metal inlaid copper integration are established. Dielectric constants of candidate materials are estimated from line-to-line capacitance measurements and FEM. Implications regarding the changes in dielectric constant are discussed.

Keywords

CVD coatings; copper; dielectric thin films; integrated circuit metallisation; permittivity; Cu; FEM; inlaid Cu metallization; line-to-line capacitance measurements; material property requirements; one-level-metal inlaid Cu integration; ultra-low dielectric constant insulators; Copper; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Failure analysis; Guidelines; Material properties; Materials testing; Semiconductor materials; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979406

Filename

979406