DocumentCode :
2163516
Title :
Robust design of quantum potential profile for electron transmission in semiconductor nanodevices
Author :
Jun Zhang ; Kosut, Robert
Author_Institution :
SC Solutions, Sunnyvale, CA, USA
fYear :
2007
fDate :
2-5 July 2007
Firstpage :
2381
Lastpage :
2386
Abstract :
In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization problem which is solved locally via a sequential linear program.
Keywords :
electron gas; optimisation; semiconductor quantum dots; electron transmission coefficient; optimization problem; quantum potential profile; semiconductor nanodevices; sequential linear program; voltage characteristic; Electric potential; Linear programming; Nanoscale devices; Optimization; Robustness; Semiconductor devices; Uncertainty;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control Conference (ECC), 2007 European
Conference_Location :
Kos
Print_ISBN :
978-3-9524173-8-6
Type :
conf
Filename :
7068650
Link To Document :
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