Novel dielectric deposition technology for advanced interconnect with air gap

Author

Faguet, Jacques ; Lee, Eric ; Liu, Junjun ; Brcka, Jozef ; Akiyama, Osayuki

Author_Institution

US Technol. Dev. Center, Tokyo Electron, Albany, NY

fYear

2009

fDate

1-3 June 2009

Firstpage

35

Lastpage

37

Abstract

A filament-assisted chemical vapor deposition (FACVD) concept for back-end-of-line (BEOL) applications is presented. Key capabilities of this technology include low-temperature plasma-free film deposition with straightforward scalability and extendibility. Deposition mechanism and film properties are compared with conventional plasma-enhanced CVD (PECVD). FACVD deposition of a decomposable polymer and a porous low-k organosilicate cap is demonstrated to build air gap structures. Other FACVD applications are also discussed.

Keywords

CVD coatings; air gaps; chemical vapour deposition; dielectric materials; integrated circuit interconnections; low-k dielectric thin films; polymer films; porous materials; FACVD; advanced interconnect; air gap structures; back-end-of-line application; decomposable polymer; dielectric deposition technology; filament-assisted chemical vapor deposition; low-temperature film deposition; porous low-k organosilicate cap; scalability; Chemical technology; Chemical vapor deposition; Dielectric substrates; Electrons; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Polymers; Scalability; FACVD; air gap; interconnect; low-k;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090333

Filename

5090333