Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-enhanced chemical vapor deposition and their electrical properties

Author

Katagiri, Masayuki ; Yamazaki, Yuichi ; Sakuma, Naoshi ; Suzuki, Mariko ; Sakai, Tadashi ; Wada, Makoto ; Nakamura, Naofumi ; Matsunaga, Noriaki ; Sato, Shintaro ; Nihei, Mizuhisa ; Awano, Yuji

Author_Institution

MIRAI-Selete, Kawasaki

fYear

2009

fDate

1-3 June 2009

Firstpage

44

Lastpage

46

Abstract

We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-excited remote plasma-enhanced chemical vapor deposition at 450degC. The resistance of a 70-nm-diameter CNT via is 52 Omega, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1times10⁸ A/cm².

Keywords

carbon nanotubes; contact resistance; interconnections; nanotechnology; plasma CVD; C; CNT; SiOC interlayer dielectrics; carbon nanotube; current density; remote plasma-enhanced chemical vapor deposition; resistance; resistance 52 ohm; size 70 nm; temperature 450 degC; via interconnect; Carbon nanotubes; Chemical vapor deposition; Fabrication; Plasma applications; Plasma chemistry; Plasma density; Plasma properties; Plasma sources; Plasma temperature; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090336

Filename

5090336