Title :
A novel helium ion microscope for interconnect material imaging
Author :
Thompson, William ; Ogawa, Shinichi ; Stern, Lewis ; Scipioni, Larry ; Notte, John
Author_Institution :
ALIS Div., Carl Zeiss SMT, Peabody, MA
Abstract :
The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.
Keywords :
Rutherford backscattering; copper; integrated circuit interconnections; ion microscopy; low-k dielectric thin films; Cu; Rutherford backscatter imaging mode; STIM; dual damascene copper interconnect technology; fidelity information; helium ion microscope; interconnect material imaging; ion induced secondary electron mode; low k dielectric; pattern dimension; scanning transmission ion imaging mode; subnanometer resolution; Copper; Dielectric materials; Health information management; Helium; Image resolution; Organic materials; Probes; Scanning electron microscopy; Shape; Transmission electron microscopy;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090342
