A novel helium ion microscope for interconnect material imaging

Author

Thompson, William ; Ogawa, Shinichi ; Stern, Lewis ; Scipioni, Larry ; Notte, John

Author_Institution

ALIS Div., Carl Zeiss SMT, Peabody, MA

fYear

2009

fDate

1-3 June 2009

Firstpage

69

Lastpage

71

Abstract

The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. This paper will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.

Keywords

Rutherford backscattering; copper; integrated circuit interconnections; ion microscopy; low-k dielectric thin films; Cu; Rutherford backscatter imaging mode; STIM; dual damascene copper interconnect technology; fidelity information; helium ion microscope; interconnect material imaging; ion induced secondary electron mode; low k dielectric; pattern dimension; scanning transmission ion imaging mode; subnanometer resolution; Copper; Dielectric materials; Health information management; Helium; Image resolution; Organic materials; Probes; Scanning electron microscopy; Shape; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090342

Filename

5090342