Characterization of Low-k SiOCH Layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams

Author

Uedono, A. ; Inoue, N. ; Hayashi, Y. ; Eguchi, K. ; Nakamura, T. ; Hirose, Y. ; Yoshimaru, M. ; Oshima, N. ; Ohdaira, T. ; Suzuki, R.

Author_Institution

Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba

fYear

2009

fDate

1-3 June 2009

Firstpage

75

Lastpage

77

Abstract

Pore characteristics of SiOCH layers in fine-pitch Cu-damascene interconnects were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for the samples fabricated with the line/space widths of 0.27/0.27 and 1.08/1.08 mum, respectively. From measurements of the positronium (Ps) lifetimes, the mean pore size was estimated. The Ps intensity in SiOCH was found to be decreased by the scaling, which was attributed to the damage introduced during the damascene process.

Keywords

Doppler broadening; copper; integrated circuit interconnections; low-k dielectric thin films; porosity; positron annihilation; positronium; silicon compounds; Cu; Cu-damascene interconnects; Doppler broadening spectra; Ps intensity; annihilation radiation; distance 0.27 mum; distance 1.08 mum; low-k SiOCH layers; mean pore size was; monoenergetic positron beams; positronium lifetime spectra; Electron emission; Electron traps; Integrated circuit interconnections; Isotopes; Life estimation; Lifetime estimation; Positrons; Scattering parameters; Solids; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090344

Filename

5090344