Title :
Resist planarization for trench first dual damascene
Author :
Chibahara, Hiroyuki ; Korogi, Hayato ; Ono, Yoshiharu ; Saito, Takayuki ; Yoshikawa, Kazunori ; Yonekura, Kazumasa ; Furuhashi, Takahisa ; Tomita, Kazuo ; Sakaue, Hiroshi ; Ueki, Akira ; Matsumoto, Susumu ; Akazawa, Moriaki ; Miyatake, Hiroshi
Author_Institution :
Renesas Technol. Corp., Itami
Abstract :
Resist planarization is applied to trench first dual damascene process in order to enhance focus margin for via lithography after hard mask etch. As a planarization process, resist CMP is better than conventional resist etch back, However, hard mask (HM) erosion by resist CMP causes serious problem of lessened thickness of Cu. To solve it, the combination of CMP and etch back (C+E) is adopted. This method realizes enhancement of the focus margin and prevention from the hard mask erosion at the same time.
Keywords :
chemical mechanical polishing; etching; integrated circuit interconnections; lithography; masks; planarisation; resists; etch back; focus margin; hard mask erosion; hard mask etch; lithography; resist CMP; resist planarization; trench first dual damascene; Chemicals; Cities and towns; Dielectrics; Dry etching; Lithography; Planarization; Resists; Slurries; Strips; Wet etching;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090351
