• DocumentCode
    2164111
  • Title

    New multi-step UV curing process for porogen-based porous SiOC

  • Author

    Seo, Kohei ; Oka, Yoshihiro ; Nomura, Kotaro ; Tsutsue, Makoto ; Kobori, Etsuyoshi ; Goto, Kinya ; Mizukami, Yumiko ; Ohtsuka, Toshihiro ; Tsukamoto, Kazuyoshi ; Matsumoto, Susumu ; Ueda, Tetsuya

  • Author_Institution
    Panasonic Semicond. Eng. Co., Ltd., Kyoto
  • fYear
    2009
  • fDate
    1-3 June 2009
  • Firstpage
    101
  • Lastpage
    103
  • Abstract
    In order to control the characteristics of porogen-based porous SiOC film (k < 2.5), we investigated its dependence on the wavelengths of ultraviolet (UV) light by using methods of FT-IR, TDS and nano-indentation. As a result, it was found that specific wavelengths of UV light strongly was effective to porous SiOC film production : porogen desorption, mechanical strength improvement, and reduction of the film damage. Vacuum ultraviolet (VUV) irradiation is necessary for porogen desorption. However, after porogen was removed from SiOC film, the energy of VUV irradiation was too high for porous SiOC film and this caused film damage. The energy of deep ultraviolet (DUV) irradiation was sufficient to improve mechanical strength. We propose that UV curing process should be a multi-step process consisting of VUV and DUV irradiation .The first step removes porogen using VUV irradiation. The second step forms robust porous SiOC film using DUV irradiation. A multi-step curing process was used to control the characteristics of porogen-based porous SiOC film.
  • Keywords
    bonds (chemical); curing; desorption; mechanical strength; nanoindentation; organic compounds; permittivity; porous semiconductors; silicon compounds; ultraviolet radiation effects; DUV irradiation; FT-IR; SiOC; TDS; UV curing; VUV irradiation; mechanical strength; nanoindentation; porogen desorption; porous SiOC film; Bonding; Chemical technology; Cities and towns; Curing; Dielectric constant; Infrared spectra; Lighting control; Production; Semiconductor films; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2009. IITC 2009. IEEE International
  • Conference_Location
    Sapporo, Hokkaido
  • Print_ISBN
    978-1-4244-4492-2
  • Electronic_ISBN
    978-1-4244-4493-9
  • Type

    conf

  • DOI
    10.1109/IITC.2009.5090352
  • Filename
    5090352