• DocumentCode
    2164128
  • Title

    Determination of the impact of field enhancement in low-k dielectric breakdown

  • Author

    Bashir, Muhammad ; Milor, Linda

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2009
  • fDate
    1-3 June 2009
  • Firstpage
    104
  • Lastpage
    106
  • Abstract
    Test structures have been designed to detect the impact of field enhancement on low-k dielectric breakdown at the tips of combs in comb structures. An analysis methodology has been proposed to separate the impact of area and field enhancement. Modeling utilizes characteristic lifetimes at various area ratios. The proposed model, when compared with direct fitting of the Weibull distribution, improves lifetime estimates by 2.5 orders of magnitude at 0.01% and reduces variance of the confidence bound by 73%.
  • Keywords
    Weibull distribution; electric breakdown; integrated circuit interconnections; integrated circuit testing; life testing; Weibull distribution; comb structures; field enhancement; interconnect systems; low-k dielectric breakdown; test structure design; Copper; Dielectric breakdown; Dielectric measurements; Electric breakdown; Geometry; Integrated circuit interconnections; Life estimation; Lifetime estimation; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2009. IITC 2009. IEEE International
  • Conference_Location
    Sapporo, Hokkaido
  • Print_ISBN
    978-1-4244-4492-2
  • Electronic_ISBN
    978-1-4244-4493-9
  • Type

    conf

  • DOI
    10.1109/IITC.2009.5090353
  • Filename
    5090353