DocumentCode
2164128
Title
Determination of the impact of field enhancement in low-k dielectric breakdown
Author
Bashir, Muhammad ; Milor, Linda
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2009
fDate
1-3 June 2009
Firstpage
104
Lastpage
106
Abstract
Test structures have been designed to detect the impact of field enhancement on low-k dielectric breakdown at the tips of combs in comb structures. An analysis methodology has been proposed to separate the impact of area and field enhancement. Modeling utilizes characteristic lifetimes at various area ratios. The proposed model, when compared with direct fitting of the Weibull distribution, improves lifetime estimates by 2.5 orders of magnitude at 0.01% and reduces variance of the confidence bound by 73%.
Keywords
Weibull distribution; electric breakdown; integrated circuit interconnections; integrated circuit testing; life testing; Weibull distribution; comb structures; field enhancement; interconnect systems; low-k dielectric breakdown; test structure design; Copper; Dielectric breakdown; Dielectric measurements; Electric breakdown; Geometry; Integrated circuit interconnections; Life estimation; Lifetime estimation; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location
Sapporo, Hokkaido
Print_ISBN
978-1-4244-4492-2
Electronic_ISBN
978-1-4244-4493-9
Type
conf
DOI
10.1109/IITC.2009.5090353
Filename
5090353
Link To Document