Title :
Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET
Author :
Fung, Samuel K H ; Chan, Mansun ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
This paper describes the characterization of transient floating body effect in non-fully depleted SOI MOSFETs. The front gate coupling factor (Pfgc) is used as a measure of the “floating body stability”. A simple and yet accurate technique is proposed to measure Pfgc. From measurement, impact of scaling channel length on Pfgc is investigated. The measurement result agrees with simple analytical model. In sub-0.2 μm devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling
Keywords :
MOSFET; characteristics measurement; semiconductor device models; silicon-on-insulator; 0.2 micron; Si; analytical model; drain coupling; front gate coupling factor; instability; nonfully depleted SOI MOSFET; scaling channel length; transient floating body effect; Capacitance; Circuit stability; Coupling circuits; Length measurement; MOSFET circuits; Pulse measurements; Stability analysis; Steady-state; Threshold voltage; Transient analysis;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634942
