Metrology of 3D IC with X-ray Microscopy and nano-scale X-ray CT

Author

Wang, Steve ; Gelb, Jeff ; Lau, S H ; Yun, Wenbing

Author_Institution

Xradia, Inc., Concord, CA

fYear

2009

fDate

1-3 June 2009

Firstpage

131

Lastpage

133

Abstract

Metrology of 3D integrated circuits (IC) have presented new challenges to existing metrology technologies, particularly in cases where the 3D structure of the sample must be measured non-destructively. X-ray microscopy, on the other hand, offers very deep penetration and better than 50 nm resolution, as well as ability to distinguish different elemental compositions. When combined with computed tomography (CT) technology, the full 3D structure of an IC an be obtained non-destructively at tens of nanometer accuracy, thus making x-ray nano-CT well suited for both metrology and failure analysis (FA) applications with 3D IC.

Keywords

X-ray microscopy; computerised tomography; failure analysis; integrated circuit measurement; integrated circuit testing; nondestructive testing; 3D integrated circuits metrology; X-ray microscopy; failure analysis; nanoscale X-ray computed tomography; noncontact imaging method; nondestructive imaging method; Application specific integrated circuits; Computed tomography; Failure analysis; Integrated circuit measurements; Integrated circuit technology; Metrology; Microscopy; Particle measurements; Three-dimensional integrated circuits; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090362

Filename

5090362