DocumentCode
2164548
Title
Silicon substrate test structures for hybrid wafer scale technology
Author
Davies, M.J. ; Munns, A.G. ; Pedder, D.J.
Author_Institution
GEC-Marconi Technol. Centre Ltd., Caswell, UK
fYear
1991
fDate
29-31 Jan 1991
Firstpage
185
Lastpage
191
Abstract
The authors explore the variety of test structures that may be used in the fabrication and assembly of silicon substrate multichip modules (MCMs) that aim at wafer scale complexity levels, with particular reference to their technological role. It is pointed out that a comprehensive set of test structures has been devised that provides yield, performance, and reliability information for silicon substrate MCM development activities. Some of these structures are well suited as compact, drop-in process monitors in functional MCM substrate manufacture. Built-in chip self test, scan path interrogation of the on-chip and substrate interconnections for defect location, circuit redundancy, reconfiguration and chip network techniques could all have some place in the realization of advanced MCMs of wafer scale complexity levels
Keywords
VLSI; hybrid integrated circuits; silicon; substrates; BIST; Si substrate; Si substrate MCM; assembly; built-in chip self test; chip network techniques; circuit redundancy; defect location; drop-in process monitors; fabrication; hybrid wafer scale technology; multichip modules; on-chip interconnection; performance; reconfiguration; reliability; scan path interrogation; set of test structures; substrate interconnections; technological role; wafer scale complexity levels; yield; Assembly; Automatic testing; Circuit testing; Fabrication; Integrated circuit interconnections; Manufacturing processes; Multichip modules; Network-on-a-chip; Redundancy; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Wafer Scale Integration, 1991. Proceedings., [3rd] International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
0-8186-9126-3
Type
conf
DOI
10.1109/ICWSI.1991.151714
Filename
151714
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