Title :
Analog parameters of short-channel SOI MOSFETs
Author :
Colinge, J.P. ; Cao, M. ; Greene, W.
Author_Institution :
Univ. Catholique de Louvain, Belgium
Abstract :
The parameters of SOI devices for digital applications are well known (saturation current, subthreshold swing, transconductance, etc.). Different parameters are relevant, however, for analog applications. These parameters are the gm/ID ratio, the Early voltage, the dc gain, and the gain×bandwidth product. This paper describes the evolution of these parameters in short-channel SOI devices
Keywords :
MOS analogue integrated circuits; MOSFET; characteristics measurement; silicon-on-insulator; Early voltage; Si; analog parameters; dc gain; gm/ID ratio; gain×bandwidth product; short-channel SOI MOSFETs; Bandwidth; Capacitance; Circuit synthesis; Fabrication; Laboratories; MOSFETs; Silicon; Transconductance; Transistors; Voltage;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634946
