Title :
A miniaturized wideband 4×4 switch matrix IC using four InP-HEMT SP4T switches
Author :
Kamitsuna, Hideki ; Yamane, Yasuro ; Tokumitsu, Masami ; Sugahara, Hirohiko ; Muraguchi, Masahiro
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
A new 4×4 switch matrix requires about 1/10 the area, a low number of interconnection transmission lines (ITLs) with greatly reduced length, and half the number of overlaps between ITLs compared to a conventional one consisting of 8 SP4T switches and 16 ITLs. InP HEMTs with a low Ron-Coff product enable us to configure a dc-to-over-10-GHz SP4T switch with a series-FET configuration, which requires half the control lines of a series-shunt configuration. The switch matrix IC has an extremely small core size of 409 × 368 μm2 and achieves lower insertion loss with less deviation (<2.17∼2.28 dB) than a conventional one (<3.07∼3.62 dB) below 10 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MMIC; field effect transistor switches; indium compounds; microwave switches; FET switches; HEMT SP4T switches; InP; MMIC switches; Ron-Coff product; interconnection transmission lines; series FET configuration; series shunt configuration; switch matrix IC; HEMTs; Indium phosphide; Insertion loss; MODFETs; Microwave FETs; Optical losses; Power transmission lines; Switches; Transmission line matrix methods; Wideband;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517140
