Demonstration of TFHM scalability to 32 nm node BEOL interconnect and extendibility to ELK k ≤ 2.3 dielectric material

Author

Hamioud, K. ; Arnal, V. ; Farcy, A. ; Jousseaume, V. ; Zenasni, A. ; Gourhant, O. ; Icard, B. ; Pradelles, J. ; Manakli, S. ; Brun, Ph ; Imbert, G. ; Jayet, C. ; Assous, M. ; Maitrejean, S. ; Vilmay, M. ; Galpin, D. ; Monget, C. ; Guillan, J. ; Chhun, S.

Author_Institution

STMicroelectronics, Crolles

fYear

2009

fDate

1-3 June 2009

Firstpage

155

Lastpage

156

Abstract

A 32 nm node BEOL demonstrator using trench first hard mask (TFHM) architecture is realized. The dual damascene process is performed with ELK dielectric at line and via level and with an adapted metallization in order to meet ITRS specifications. ELK k=2.3 & k=2.2 are studied in a TFHM architecture in order to prove its extendibility to ELK dielectric materials.

Keywords

dielectric materials; electron beam lithography; integrated circuit interconnections; semiconductor device metallisation; BEOL interconnect-extendibility; TFHM scalability; dielectric material; size 32 nm; trench first hard mask architecture; CMOS technology; Capacitance; Delay; Dielectric constant; Dielectric materials; Electronic mail; Energy consumption; Lithography; Metallization; Scalability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090370

Filename

5090370