Experimental evidence of hydrogen-related SILC generation in thin gate oxide

Author

Mitani, Y. ; Satake, H. ; Toriumi, A.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Reports the study on the deuterium effect on the degradation of gate oxide under both channel hot electron (CHE) stress condition and Fowler-Nordheim (F-N) stress condition using n-MOSFETs having the deuterated gate oxides. The suppression of both interface-state generation and stress-induced leakage current (SILC) by the deuterium pyrogenic oxidation has been found not only under F-N stress condition but also under hot-hole injection condition. This result indicates that hydrogen-release process in SiO/sub 2/ correlates to the origin of SILC generation.

Keywords

MOSFET; hot carriers; insulating thin films; interface states; leakage currents; oxidation; semiconductor device reliability; Fowler-Nordheim stress; Si-SiO/sub 2/; channel hot electron stress; deuterated gate oxides; deuterium effect; deuterium pyrogenic oxidation; gate oxide degradation; hot-hole injection condition; hydrogen-related SILC generation; interface-state generation; n-MOSFETs; stress-induced leakage current; thin gate oxide; Annealing; Channel hot electron injection; Degradation; Deuterium; Hot carriers; Hydrogen; Large scale integration; Materials science and technology; Oxidation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979449

Filename

979449