Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration

Author

Asami, N. ; Owada, T. ; Akiyama, S. ; Ohara, N. ; Iba, Y. ; Kouno, T. ; Kudo, H. ; Takesako, S. ; Osada, T. ; Kirimura, T. ; Watatani, H. ; Uedono, A. ; Nara, Y. ; Kase, M.

Author_Institution

Fujitsu Microelectron. Ltd., Kuwana

fYear

2009

fDate

1-3 June 2009

Firstpage

161

Lastpage

162

Abstract

We established novel SiOC (k=2.4) with higher process damage tolerance. The SiOC was deposited using organo-silane with acetylene bond as a precursor of plasma enhanced chemical vapor deposition (PECVD). The precursor takes high concentration of carbon in the SiOC and the SiOC has closed pores since deposited without using any porogens, therefore lower damage by ashing and direct Cu polish are achieved. We fabricated Cu wirings using direct polish. We confirmed that dielectric constant of the SiOC did not increase after ashing and direct polish process and maintained k=2.4.

Keywords

copper; integrated circuit reliability; low-k dielectric thin films; permittivity; plasma CVD; polishing; silicon compounds; SiOC; acetylene bond; advanced BEOL integration; ashing; dielectric constant; direct polish; organo-silane; plasma enhanced chemical vapor deposition; process damage tolerance; Bonding; Capacitance measurement; Curing; Dielectric constant; Dielectric measurements; Frequency measurement; Plasma measurements; Semiconductor films; Spectroscopy; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090373

Filename

5090373