Constant energy charged device model (CECDM) for electrostatic discharge (ESD) and semiconductor devices

Author

Greason, William D. ; Bulach, Sviatoslav

Author_Institution

Dept. of Electr. Eng., Univ. of Western Ontario, London, Ont., Canada

Volume

2

fYear

1995

fDate

8-12 Oct 1995

Firstpage

1251

Abstract

An analysis is presented for the models and test methods used to simulate the electrostatic discharge (ESD) event for a charged semiconductor device. A new constant energy charged device model (CECDM) test method is proposed to provide control of charge and potential for constant energy discharges, and give a better evaluation of device reliability. Experimental results are presented for tests conducted on a basic CMOS structure

Keywords

MIS devices; electrostatic discharge; semiconductor device models; semiconductor device reliability; CMOS structure; ESD; charge control; charged semiconductor devices; constant energy charged device model; constant energy discharges; device reliability; electrostatic discharge; potential control; Analytical models; Biological system modeling; Capacitance; Conductors; Electrostatic discharge; Integrated circuit packaging; Semiconductor device modeling; Semiconductor device testing; Semiconductor devices; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE

Conference_Location

Orlando, FL

ISSN

0197-2618

Print_ISBN

0-7803-3008-0

Type

conf

DOI

10.1109/IAS.1995.530444

Filename

530444