DocumentCode
2164722
Title
Silicon single-electron memory and logic devices for room temperature operation
Author
Koga, J. ; Ohba, R. ; Uchida, K. ; Toriumi, A.
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issues. In SiN dot memory, the idea of an advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for a total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over conventional CMOS logic.
Keywords
Coulomb blockade; elemental semiconductors; programmable logic devices; semiconductor storage; silicon; single electron transistors; Si; SiN; data-retention issue; doubly stacked floating dot memory; functionality; programmable SET logic; room temperature operation; single-electron logic devices; single-electron memory devices; CMOS logic circuits; Electron traps; Logic circuits; Logic devices; MONOS devices; Nonvolatile memory; Silicon compounds; Single electron devices; Single electron memory; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979452
Filename
979452
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