• DocumentCode
    2164722
  • Title

    Silicon single-electron memory and logic devices for room temperature operation

  • Author

    Koga, J. ; Ohba, R. ; Uchida, K. ; Toriumi, A.

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    2001
  • fDate
    2-5 Dec. 2001
  • Abstract
    Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issues. In SiN dot memory, the idea of an advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for a total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over conventional CMOS logic.
  • Keywords
    Coulomb blockade; elemental semiconductors; programmable logic devices; semiconductor storage; silicon; single electron transistors; Si; SiN; data-retention issue; doubly stacked floating dot memory; functionality; programmable SET logic; room temperature operation; single-electron logic devices; single-electron memory devices; CMOS logic circuits; Electron traps; Logic circuits; Logic devices; MONOS devices; Nonvolatile memory; Silicon compounds; Single electron devices; Single electron memory; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-7050-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2001.979452
  • Filename
    979452