DocumentCode
2164893
Title
Strong and efficient light emission in ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode
Author
Chin, A. ; Liang, C.S. ; Lin, C.Y. ; Wu, C.C. ; Liu, J.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
We have studied the electroluminescence of ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode on Si. The light emission intensity and efficiency are >3 orders of magnitude larger than 20 /spl Aring/ SiO/sub 2/ tunnel diode and 0.18 /spl mu/m MOSFET. Besides the small 3 V operation and low power consumption, good reliability is another merit for this device.
Keywords
alumina; electroluminescence; indium compounds; light emitting diodes; low-power electronics; semiconductor device reliability; semiconductor materials; semiconductor superlattices; tin compounds; tunnel diodes; 3 V; ITO-Al/sub 2/O/sub 3/; ITO/Al/sub 2/O/sub 3/ superlattice tunnel diode; InSnO-Al2O3; Si; electroluminescence; light emission; low power operation; reliability; Charge carrier processes; Dielectrics; Electron emission; Indium tin oxide; Light emitting diodes; MOSFETs; Potential well; Radiative recombination; Spontaneous emission; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979459
Filename
979459
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