Title :
A miniature dual-band low-noise amplifier module for IEEE 802.11 b/g/a WLAN applications
Author :
Chow, Yut H. ; Chong, Thomas ; Hasan, Zulfa ; Loh, Chee C. ; Tan, Thong L. ; Chew, Eh C.
Author_Institution :
WSD R&D, Agilent Technol., Penang, Malaysia
Abstract :
This paper describes the design and implementation of a low-noise amplifier module in a single package that is capable of operating in both the 2.4 GHz band and the (4.9-6) GHz band. The module utilizes a MMIC fabricated using Agilent´s proprietary low-noise enhancement-mode pHEMT process. A cascode configuration is used to obtain high gain and low currents for the 2.4 GHz band amplifier whilst a two-stage amplifier is used in the 5 GHz band. In the 2.45 GHz band, gain is 17 dB at 14 mA current with 0.9 dB of noise figure. In the 5 GHz band, gain is (22-24)dB at 22 mA and 1.5 dB average noise figure. Input P1dB is -5.5 dBm for the 2.4GHz LNA and typically -14 dBm for the 5 GHz LNA. IIP3 is +5.5 dBm for the 2.4 GHz LNA and typically -2dBm for the 5GHz band. The complete design uses only one RF input matching component external to the MMIC inside the module. The complete LNA is housed in a 3mm × 3mm molded chip-on-board package and requires only two external bypass capacitors in actual operation.
Keywords :
HEMT integrated circuits; MMIC amplifiers; UHF amplifiers; chip scale packaging; integrated circuit design; low noise amplifiers; wireless LAN; 0.9 dB; 14 mA; 17 dB; 2.4 GHz; 2.45 GHz; 22 mA; 22 to 24 dB; 4.9 to 6 GHz; 5 GHz; MMIC amplifiers; RF input matching component; WLAN IEEE 802.11 bga standards; cascode configuration; chip-on-board packaging; dual-band low-noise amplifiers; external bypass capacitors; low-noise enhancement-mode pHEMT process; two-stage amplifier; Dual band; Gain; Impedance matching; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Packaging; Radio frequency; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517154
