Deposition behavior and diffusion barrier property of CVD MnOx

Author

Matsumoto, K. ; Neishi, K. ; Itoh, H. ; Sato, H. ; Hosaka, S. ; Koike, J.

Author_Institution

Technol. Dev. Center, Tokyo Electron Ltd., Nirasaki

fYear

2009

fDate

1-3 June 2009

Firstpage

197

Lastpage

199

Abstract

Chemical vapor deposition of MnOx (CVD-MnO_x) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnO_x was formed by the MnO_x on SiO₂ within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 degC. In contrast, the CVD-MnO_x on Cu formed solid solution with Cu. The solute Mn was migrated towards the interface of Cu/SiO₂ to form MnO_x.

Keywords

ULSI; annealing; chemical vapour deposition; copper; diffusion barriers; electrical contacts; integrated circuit interconnections; manganese compounds; silicon compounds; MnO_x-Cu; MnO_x-SiO₂; annealing; blanket substrates; chemical vapor deposition; contact hole; diffusion barrier; patterned interconnect structures; size 3 nm to 4 nm; temperature 400 degC; ultralarge scale integrated circuits; Annealing; Chemical vapor deposition; Electrons; Integrated circuit interconnections; Manganese; Materials science and technology; Sputtering; Substrates; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090386

Filename

5090386