Title :
Metallization of sub-30 nm interconnects: Comparison of different liner/seed combinations
Author :
Carbonell, Laureen ; Volders, Henny ; Heylen, Nancy ; Kellens, Kristof ; Caluwaerts, Rudy ; Devriendt, Katia ; Sanchez, Efraín Altamirano ; Wouters, Johan ; Gravey, Virginie ; Shah, Kavita ; Luo, Qian ; Sundarrajan, Arvind ; Lu, Jiang ; Aubuchon, Joseph ;
Author_Institution :
IMEC vzw, Leuven
Abstract :
Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.
Keywords :
chemical mechanical polishing; cobalt; integrated circuit interconnections; integrated circuit metallisation; manganese compounds; ruthenium alloys; tantalum; tantalum alloys; tantalum compounds; CMP; MnOx; RuTa; TaN-Co; TaN-Ta; critical dimensions; electrical yields; interconnects; metallization; narrow trenches; sacrificial FIN approach; scalability; size 25 nm; slurries; Copper; Etching; Geometry; Inorganic materials; Lithography; Manufacturing; Metallization; Organic materials; Scalability; Slurries;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090387
