Title :
A 77GHz automotive radar MMIC chip set fabricated by a 0.15μm MHEMT technology
Author :
Kang, Dong Min ; Hong, Ju Yeon ; Shim, Jae Yeob ; Lee, Jin Hee ; Yoon, Hyung Sup ; Lee, Kyung Ho
Author_Institution :
Basic Res. Lab., ETRI, Daejeon, South Korea
Abstract :
A MMIC chip set consisting of a power amplifier, a driver amplifier, low noise amplifier, and a frequency doubler has been developed for automotive radar systems at 77GHz. The chip set was fabricated using 0.15 μm gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76-77GHz with 15.5 dBm output power. The chip size is 2mm × 2mm. The driver amplifier exhibited a gain of 23dB over a 76-77 GHz band with an output power of 13dBm. The chip size is 2.1mm × 2mm. The low noise amplifier achieved a gain of 20 dB in a band between 76-77GHz with an output power of 10 dBm. The chip size is 2.2mm × 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in W-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC power amplifiers; aluminium compounds; automotive electronics; driver circuits; field effect MMIC; frequency multipliers; gallium arsenide; indium compounds; low noise amplifiers; millimetre wave integrated circuits; road vehicle radar; -16 dB; 0.15 micron; 20 dB; 23 dB; 38.25 GHz; 38.25 dB; 4 inch; 76 to 77 GHz; 76.5 GHz; 77 GHz; InGaAs-InAlAs-GaAs; MHEMT technology; automotive radar MMIC chip; driver amplifiers; frequency doubler; low noise amplifiers; power amplifiers; Automotive engineering; Driver circuits; Frequency conversion; Indium gallium arsenide; Low-noise amplifiers; MMICs; Power amplifiers; Power generation; Radar; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517164