DocumentCode
2165230
Title
Integration of silicon etched waveguides with MCM-D for V- and W-band
Author
Ocket, I. ; Nauwelaers, B. ; Carchon, G. ; Jourdain, A. ; De Raedt, W.
Author_Institution
K.U. Leuven, ESAT-Telemic, Heverlee, Belgium
fYear
2005
fDate
12-17 June 2005
Abstract
This paper describes the design, analysis and realization of a fully planar transition from stripline to silicon waveguide. The trapezoidal waveguide is wet etched in silicon and bonded to an MCM-D structure containing the transition. The transition consists of a stripline ending in a resonating rectangular BCB cavity. Power is fed from this cavity to the waveguide through a slot in the bottom plane of the waveguide which is formed on the top metallization of the MCM-D structure. Transitions were designed at 60 GHz and 100 GHz. The simulated insertion loss of the transition is 1.1 dB at 60 GHz and 1 dB at 100 GHz. The transition bandwidths are 10.8% and 9.1%, respectively.
Keywords
cavity resonators; etching; planar waveguides; rectangular waveguides; silicon; 1 dB; 1.1 dB; 100 GHz; 60 GHz; MCM-D structure; Si; millimeter wave waveguides; multichip modules; planar transition; resonating rectangular BCB cavity; silicon etched waveguides; trapezoidal waveguides; wet etching; Metallization; Millimeter wave radar; Millimeter wave technology; Planar transmission lines; Planar waveguides; Rectangular waveguides; Silicon; Stripline; Waveguide transitions; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1517165
Filename
1517165
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