DocumentCode
2165278
Title
Impact of LER on BEOL dielectric reliability: A quantitative model and experimental validation
Author
Tökei, Zs ; Roussel, Ph ; Stucchi, M. ; Versluijs, J. ; Ciofi, I. ; Carbonell, L. ; Beyer, G.P. ; Cockburn, A. ; Agustin, M. ; Shah, K.
Author_Institution
IMEC, Leuven
fYear
2009
fDate
1-3 June 2009
Firstpage
228
Lastpage
230
Abstract
For the first time we provide a model for describing the LER induced BEOL TDDB lifetime reduction. The model was validated on 50 nm frac12 pitch copper damascene lines embedded into a k=2.5 low-k material.
Keywords
dielectric materials; electric breakdown; electron beam lithography; integrated circuit interconnections; integrated circuit reliability; BEOL dielectric reliability; LER; TDDB lifetime reduction; pitch copper damascene lines; Copper; Dielectric breakdown; Dielectric materials; Dielectric measurements; Electronic mail; Lithography; Testing; Time measurement; Tin; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location
Sapporo, Hokkaido
Print_ISBN
978-1-4244-4492-2
Electronic_ISBN
978-1-4244-4493-9
Type
conf
DOI
10.1109/IITC.2009.5090395
Filename
5090395
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