35 GHz pulsed HBT MMIC amplifiers

Author

Wohlert, R.M. ; Jackson, G. ; Adlerstein, M.G.

Author_Institution

Res. Div., Raytheon Co., Lexington, MA, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

187

Lastpage

190

Abstract

A three-stage MMIC preamplifier and a two-stage power amplifier using GaAs/AlGaAs Heterojunction Bipolar Transistors (HBTs) have been developed for pulsed-power applications at 35 GHz. Both amplifiers have been fully characterized at 35 GHz with RF input power and base bias pulse wave forms having 33% duty cycles and 300 nS pulse lengths. The preamplifier delivers a peak output power of 19.6 dBm at 11% PAE and 12.6 dB associated gain at a bias of VCE=6 V and IC=128 mA. The power amplifier delivers a peak output power of 29 dBm at 15% PAE and 5 dB associated gain after minimal external tuning at a bias of VCE=6 V and IC=600 mA. The monolithic amplifiers reported here are based upon 35 GHz power HBTs and represent the first such amplifiers yet reported.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; preamplifiers; pulsed power technology; 11 percent; 12.6 dB; 15 percent; 300 ns; 35 GHz; 5 dB; GaAs-AlGaAs; GaAs/AlGaAs; HBTs; RF input power; base bias pulse wave forms; duty cycles; external tuning; peak output power; pulse lengths; pulsed-power applications; three-stage MMIC preamplifier; two-stage power amplifier; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Preamplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332107

Filename

332107