Title :
Monolithic integrated 75 GHz oscillator with high output power using a pseudomorphic HFET
Author :
Bangert, A. ; Schlechtweg, M. ; Reinert, W. ; Haydl, T. ; Hulsmann, A. ; Kohler, K.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Recently, there has been growing interest in MMICs for circuit applications in the 76 to 77 GHz frequency range allocated for automotive systems in Europe. We have designed and fabricated an oscillator for a frequency of 75 GHz, using a quasilinear approach combined with a simple matching procedure to achieve maximum output power. The MMICs were fabricated using pseudomorphic GaAs HFETs with mushroom gates (0.16 /spl mu/m length, 2/spl times/25 /spl mu/m width) as the active devices. The output power of the oscillator was 8 mW at 75 GHz with a drain bias of V/sub DS/=3V. To our knowledge, this is the highest output power from a single stage HFET oscillator at this frequency.<>
Keywords :
III-V semiconductors; MMIC; active networks; automotive electronics; gallium arsenide; microwave oscillators; negative resistance; 0.16 micron; 3 V; 75 GHz; 8 mW; GaAs; MMICs; automotive systems; drain bias; matching procedure; mushroom gates; output power; pseudomorphic HFET; quasilinear approach; single stage HFET oscillator; Automotive engineering; Circuits; Europe; Frequency; HEMTs; MMICs; MODFETs; Oscillators; Power generation; Radio spectrum management;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332111
