Excimer laser formed vertical links of standard CMOS double-level metallizations

Author

Hillmann-Ruge, Th ; Hartmann, H.-D.

Author_Institution

Lab. fur Informationstechnol., Hannover Univ., Germany

fYear

1991

fDate

29-31 Jan 1991

Firstpage

207

Lastpage

213

Abstract

Excimer-laser-formed vertical links between two metallization levels are demonstrated on special test chips, fabricated by ES2 in a standard CMOS process. Yield is 100% using link structures of 20 μm×20 μm and 14 μm×14 μm linear dimension and two identical laser pulses. Mean contact resistance is less than 200 Ω. A new test chip is built using sandwich layers for metallization and spin-on glass planarization. Temperature and humidity cycling of processed antifuses was carried out

Keywords

CMOS integrated circuits; VLSI; environmental testing; excimer lasers; integrated circuit technology; laser beam applications; life testing; metallisation; 14 micron; 20 micron; 200 ohm; ES2; WSI; contact resistance; excimer laser formed vertical links; humidity cycling; link structures; processed antifuses; spin-on glass planarization; standard CMOS double-level metallizations; standard CMOS process; temperature cycling; test chips; two identical laser pulses; vertical links between two metallization levels; yield; CMOS process; Gas lasers; Laser modes; Metallization; Optical filters; Optical pulses; Optical resonators; Power lasers; Probes; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Scale Integration, 1991. Proceedings., [3rd] International Conference on

Conference_Location

San Francisco, CA

Print_ISBN

0-8186-9126-3

Type

conf

DOI

10.1109/ICWSI.1991.151717

Filename

151717