Integration and reliability of CVD Ru cap for Cu/Low-k development

Author

Yang, C.-C. ; Edelstein, D. ; Chanda, K. ; Wang, P. ; Hu, C.-K. ; Liniger, E. ; Cohen, S. ; Lloyd, J.R. ; Li, B. ; McFeely, F. ; Wisnieff, R. ; Ishizaka, T. ; Cerio, F. ; Suzuki, K. ; Rullan, J. ; Selsley, A. ; Jomen, M.

Author_Institution

IBM at Albany Nanotechnol. Center for Semicond. Res., Albany, NY

fYear

2009

fDate

1-3 June 2009

Firstpage

255

Lastpage

257

Abstract

Selective CVD Ru cap deposition process has been developed for BEOL Cu/low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I-V), and time-dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate for 22 nm and beyond technology nodes.

Keywords

chemical vapour deposition; copper; electromigration; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; ruthenium; BEOL copper/low-k integration; CVD Ru cap deposition process; Cu; Ru; dielectrics; electromigration lifetime; time-dependent-dielectric-breakdown; voltage ramp; Atherosclerosis; Capacitance; Degradation; Dielectric substrates; Electromigration; Surface contamination; Surface resistance; Surface treatment; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090402

Filename

5090402