Title :
Challenges of Ultra low-k integration in BEOL interconnect for 45nm and beyond
Author :
Liu, H. ; Widodo, J. ; Liew, S.L. ; Wang, Z.H. ; Wang, Y.H. ; Lin, B.F. ; Wu, L.Z. ; Seet, C.S. ; Lu, W. ; Low, C.H. ; Liu, W.P. ; Zhou, M.S. ; Hsia, L.C.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
This paper presents some major integration challenges in Ultra low-k (ULK) Back-End-Of-Line (BEOL) interconnects for 45 nm and beyond. The discussions mainly address the challenges that arise from ultra violet (UV) curing that cause changes in the composition of Nitrogen doped Silicon Carbide (SiCN), poor mechanical strength of ULK, Reactive Ion Etching (RIE) and barrier deposition plasma induced damage at the sidewall and the bottom of the trench, and gap-fill limitation of the copper (Cu) process. The physical characterization and Resistance-Capacitance (RC) results of the ULK integration are also presented.
Keywords :
curing; integrated circuit interconnections; low-k dielectric thin films; silicon compounds; sputter etching; wide band gap semiconductors; BEOL interconnect; SiCN; back-end-of-line interconnects; barrier deposition plasma; gap-fill limitation; nitrogen doped silicon carbide; reactive ion etching; resistance-capacitance; size 45 nm; ultra low-k integration; ultra violet curing; Bonding; Chemicals; Copper; Curing; Dielectric constant; Etching; Nitrogen; Plasma applications; Plasma materials processing; Silicon carbide;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090403
