Title :
Monolithic Ka-band FET receiver chips
Author :
Reeves, R. ; Brady, V.
Author_Institution :
Gamma Monolithics, Orlando, FL, USA
Abstract :
Integrated SSB low noise receivers have been developed using 0.25 um PHEMT mushroom gate process. The chip includes low noise amplifiers, miniature image noise filter, and FET downconverters to achieve less than a 4 dB SSB NF. These circuits can be used in SSB communication systems or in monopulse radar receiver applications where they will reduce channel to channel tracking errors, test, and assembly costs compared to a three chip assembly of LNA, filter, and downconverter.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; radar receivers; radio receivers; 0.25 micron; 34 GHz; 4 dB; EHF; FET downconverters; FET receiver chips; Ka-band; LNA; MIMIC; MM-wave IC; PHEMT mushroom gate process; SSB communication systems; image noise filter; integrated SSB low noise receivers; low noise amplifiers; monopulse radar receiver applications; pseudomorphic HEMT; Amplitude modulation; Assembly systems; Circuit testing; FETs; Filters; Low-noise amplifiers; Noise measurement; Noise reduction; PHEMTs; Radar tracking;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1418-2
DOI :
10.1109/MCS.1994.332115
