DocumentCode
2165601
Title
Crosstalk attenuation with ground plane structures in three-dimensionally integrated mixed signal systems
Author
Kim, Sang K Kevin ; Liu, Christianto C. ; Xue, Lei ; Tiwari, Sandip
Author_Institution
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2005
fDate
12-17 June 2005
Abstract
We report significant crosstalk reduction between two transistor planes in 3D integrated circuits (3D ICs) using tungsten ground plane structures as the isolation layer. Simulation and experimental results show ∼8 dB of crosstalk attenuation. A significant conclusion of our study is that a ground plane that physically shadows the region it is isolating is optimum for deriving most of the benefits of isolation. We also show that for ground planes composed of standard MOS metallizations, i.e. W, Al, Cu, similar crosstalk isolation is expected. The inter-device ground plane structures have potential to be standard isolation technology for 3D mixed-signal and RF integrated systems due to simple fabrication and significant crosstalk attenuation.
Keywords
MOS integrated circuits; crosstalk; integrated circuit metallisation; isolation technology; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; tungsten; 3D integrated circuits; 3D integrated mixed signal systems; MOS metallizations; RF integrated systems; W; crosstalk attenuation; crosstalk isolation; crosstalk reduction; inter-device ground plane structures; isolation technology; transistor planes; tungsten ground plane structures; Attenuation; Circuit simulation; Crosstalk; Fabrication; Frequency; Integrated circuit interconnections; Isolation technology; Metallization; Three-dimensional integrated circuits; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1517176
Filename
1517176
Link To Document