High thermal stability of poly-Si nodes with novel CrTiN/TiN double barrier layers for high-density ferroelectric memory applications

Author

June-Mo Koo ; Suk-Kyoung Hong ; Seung Jin Yeom ; Jae Sung Roh ; Jiyoung Kim

Author_Institution

Dept. of Mater. Eng., Kookmin Univ., Seoul, South Korea

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We propose a novel CrTiN/TiN double barrier layer technology for high-density COB structure applications. After furnace annealing at 800/spl deg/C for 30min, a 0.35/spl mu/m poly-Si contact test structure with the Pt/CrTiN/TiN layer was found to maintain ohmic behaviors and provide a resistance of about 1k/spl Omega/. In addition, these contact structures successfully exhibited long time thermal stability at 750/spl deg/C. The findings of this study suggest that the CrTiN/TiN double barrier layer method is suitable for the COB structure in order to realize high-density ferroelectric memory applications.

Keywords

annealing; chromium compounds; elemental semiconductors; ferroelectric storage; silicon; thermal stability; titanium compounds; 0.35 micron; 1 kohm; 750 C; 800 C; CrTiN/TiN double barrier layer; Pt-CrTiN-TiN; Si; ferroelectric memory; furnace annealing; high-density COB structure; ohmic resistance; polysilicon contact structure; thermal stability; Annealing; Contact resistance; Ferroelectric materials; Furnaces; Oxidation; Plugs; Temperature; Testing; Thermal stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979484

Filename

979484