Novel direct-tunneling-current (DTC) method for channel length extraction beyond sub-50nm gate CMOS

Author

Sungkwon Hong ; Yaohui Zhang ; Yuhao Luo ; Suligoj, T. ; Seong-Dong Kim ; Woo, J.C.S. ; Li, Ruodai ; Byoung-Woon Min ; Hradsky, B. ; Vandooren, A. ; Bich-Yen Nguyen ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

A novel method for accurate gate length extraction has been developed using direct tunneling current (DTC) through thin gate oxide. Applied to decanano CMOS devices, the proposed method is verified to be free from a severe assumption of unified effective mobility that is one of limitations of conventional method to sub-0.1 /spl mu/m. The DTC method is also insensitive to doping concentration and gate oxide thinning effect at the corner regions. In addition, we have studied the channel length dependence on gate line-edge roughness by comparing the DTC method and the conventional channel current method.

Keywords

CMOS integrated circuits; carrier mobility; tunnelling; 50 nm; CMOS device; channel current method; channel length; direct-tunneling-current method; doping concentration; effective mobility; gate length; gate line-edge roughness; gate oxide thinning; parameter extraction; Circuit synthesis; Current measurement; Degradation; Doping; Impurities; Laboratories; Leakage current; Silicon; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979488

Filename

979488